System architecture for integrated photonics optical gyroscopes

ABSTRACT

The present disclosure relates to system-level integration of lasers, electronics, integrated photonics-based optical components and a rotation sensing element, which can be a fiber coil or a sensing coil/micro-resonator ring on a sensing chip. Novel waveguide design on the integrated photonics chip, acting as a front-end chip, ensures precise detection of phase change in the fiber coil or the sensing chip, where the sending chip is coupled to the front end chip. Electrical and/or thermal phase modulators are integrated with the integrated photonics chip. Additionally, implant regions are introduced around the waveguides and other optical components to block unwanted/stray light into the waveguides and optical signal leaking out of the waveguide.

RELATED APPLICATIONS

This application is a continuation-in-part application of co-pending U.S. patent application Ser. No. 16/983,867, filed Aug. 3, 2020, titled “System Architecture for Silicon Photonics Optical Gyroscopes,” which is a continuation of U.S. patent application Ser. No. 16/659,424, filed Oct. 21, 2019, titled “System Architecture for Silicon Photonics Optical Gyroscopes,” which claims the benefit of U.S. Provisional Patent Application Nos. 62/904,443, filed Sep. 23, 2019, titled, “System Architecture for Silicon Photonics Optical Gyroscopes with Mode-Selective Waveguides,” and 62/872,640, filed Jul. 10, 2019, titled “System Architecture for Silicon Photonics Optical Gyroscopes,” the entireties of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to system-level integration of integrated photonics-based optical gyroscopes.

BACKGROUND

Gyroscopes (sometimes also referred to as “gyros”) are devices that are able to sense angular velocity. Gyroscopes can be mechanical or optical, and vary in precision, performance cost and size. The applications include, but are not limited to, military, aircraft navigation, robotics, autonomous vehicles, virtual reality, augmented reality, gaming etc. Optical gyroscopes typically have the highest performance and are based on interferometric measurements and the Sagnac effect (a phenomenon encountered in interferometry that is elicited by rotation). Since optical gyroscopes do not have any moving parts, they have advantages over mechanical gyroscopes as they can withstand effects of shock, vibration and temperature variation better than the mechanical gyroscopes with moving parts. The most common optical gyroscope is the fiber optical gyroscope (FOG). Construction of a FOG typically involves a long loop (or a coil comprising several loops) of polarization-maintaining (PM) fiber. Laser light is launched into both ends of the PM fiber traveling in different directions. If the fiber coil is moving, the optical beams experience different optical path lengths with respect to each other. By setting up an interferometric system, one can measure the small path length difference that is proportional to the area of the enclosed loop and the angular velocity of the rotating coil.

Phase signal of an optical gyro is proportional to the Sagnac effect times the angular rotation velocity, as shown in the following equation: Δϕ=(8πNA/λc)Ω where, N=number of turns in the gyro,

A=area enclosed

Ω=angular rotation velocity

Δϕ=optical phase difference signal

λ=wavelength of light

c=speed of light

These FOG's can have very high precision, but at the same time, they are of large dimension, are very expensive, and are hard to assemble due to the devices being built based on discrete optical components that need to be aligned precisely. Often, manual alignment is involved, which is hard to scale up for volume production.

SUMMARY

Disclosed herein are system components and methods to produce a small-footprint integrated photonics optical gyroscope. Integrated photonics optical gyroscopes may be based on silicon photonics, which are abbreviated as SiPhOG™ (Silicon Photonics Optical Gyroscope), though compound semiconductor (III-V semiconductor) based integrated photonics optical gyroscopes are also within the scope of this disclosure. Furthermore, some embodiments of the integrated photonics optical gyroscopes may have a combination of silicon photonics and III-V semiconductor based photonics components. The inventors design an integrated photonics chip with higher-level system architecture and key performance parameters in mind, including, but not limited to laser performance, tuning parameters, detector parameters, as well as packaging considerations.

The key to fiber-based optical gyroscope's performance is the long length of high quality, low loss, optical fiber that is used to measure the Sagnac effect. The present inventors recognize that with the advent of integrated photonics suitable for wafer scale processing, there is an opportunity to replace FOGs with smaller integrated photonic chip solutions without sacrificing performance. Photonics based optical gyros have reduced size, weight, power and cost, but in addition can be mass produced in high volume, are immune to vibration and have the potential to offer performances equivalent to FOGs.

One key element of this integrated photonic solution is to couple an integrated photonics chip with integrated photonic components thereon to a waveguide chip (also called a sensing chip) that replaces the long length of a polarization-maintaining (PM) optical fiber coil containing very low loss waveguides. However, the integrated photonics chip can also act as the front-end chip for a fiber loop. The integrated photonics chip as well as the waveguide chip can be manufactured using wafer scale processes. The sensing chip can have a waveguide coil with multiple turns, or a single-turn microresonator ring.

The solution disclosed herein involves low-loss waveguide coils (patterned in the shape of a spiral, which may be circular or any other geometry suitable for volume manufacturing) or rings. Either of these WG coil designs may be on a same plane or may be distributed among a plurality of vertical planes to increase the length of the optical path while avoiding the increased loss caused by intersecting waveguides in the state-of-the-art designs. The waveguide design and manufacture techniques are described in U.S. provisional application No. 62/858,588, filed Jun. 7, 2019.

A laser source of suitable wavelength (which may deviate from 1550 nm for optical gyroscope applications to achieve optimum waveguide loss) may be fiber-coupled to the integrated photonics chip. The receiving end of the waveguide on the integrated photonics chip may be tapered (i.e. flared to match the size of the core of a single-mode fiber, which is typically 8-10 μm). The waveguide on the integrated photonics chip is polarization maintaining (e.g., TE polarized), which may be achieved by suitable design of the waveguide. For example, strip waveguides are designed to primarily select TE mode over TM mode when laser light is coupled into the integrated photonics chip. A plurality of mode-selective filters, which may be based on multi-mode interference (MMI) filter or a serpentine structure, or other integrated device structure (such as integrated metal lines, altering waveguide dimensions etc.), are introduced in the system architecture. Additionally, implant regions are introduced around the waveguides and other optical components to block unwanted/stray light into the waveguides and optical signal leaking out of the waveguide.

On-chip detectors on the integrated photonics chip can be p-i-n photodetectors or avalanche photodiodes (APDs) that convert light to electrical signal. The detectors are used for measuring the Sagnac effect, for testing as well as power monitoring.

Various types of integrated photonics chips may be fabricated to test the performance of the optical gyroscope. The different designs may have additional components added or removed for testing purposes, e.g., for packaging experiments, testing and or assembly. Various designs may be accommodated in a multi-project wafer (MPW).

Specifically, aspects of the disclosure includes, directional couplers and/or splitters, as well as phase modulators that can be electrical and/or thermal. The electrical portion of the phase modulator can be based on p-n junctions and p-i-n (i.e, p-intrinsic-n) junctions.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detailed description given below and from the accompanying drawings of various implementations of the disclosure. Please note that the dimensions shown in the figures are for illustrative purposes only and not drawn to scale.

FIG. 1 illustrates a high-level architecture for a typical fiber optical gyroscope based on Sagnac effect.

FIG. 2 illustrates a high-level architecture for a fiber optical gyroscope where at least some components at the front end are replaced with an integrated photonics chip.

FIG. 3A is a schematic of one embodiment of an integrated photonics based front end that couples to a SiN waveguide chip.

FIG. 3B is a schematic of the embodiment shown in FIG. 3A with additional electronic components on-chip.

FIG. 3C is a schematic of the embodiment shown in FIG. 3A with deep implant around key detector that is used to measure the Sagnac effect.

FIG. 4 is a schematic of another embodiment of an integrated photonics chip with an optional polarizer or optical mode selective filter.

FIG. 5A is schematic of yet another embodiment of an integrated photonics chip that couples to a SiN waveguide chip, wherein the integrated photonics chip is designed to facilitate packaging.

FIG. 5B illustrates leakage of light into slab portion of a rib waveguide. Specifically, the left figure in FIG. 5B shows that the leakage of light into the slab portion of the waveguide is more prominent around bends, curves and junctions or interfaces. The right figure in FIG. 5B illustrates that leakage of light into the slab portion of the rib waveguide in straight sections of the waveguide is less prominent compared to the left figure.

FIG. 5C shows a perspective view of a rib waveguide structure with high dose of implants and absorbers to prevent leakage of light.

FIG. 5D is a schematic top view of the embodiment shown in FIG. 5A modified with implants all around the waveguides according to the scheme shown in FIG. 5C.

FIG. 5E is a schematic top view of another embodiment of an integrated photonics chip modified with implants all around the waveguides according to the scheme shown in FIG. 5C.

FIG. 6 is schematic of a package housing a laser, various control integrated circuits, an integrated photonics chip and a SiN waveguide-based gyro chip (sensing chip).

FIG. 7 is schematic of a configuration where a laser is coupled to an integrated photonics chip but not part of the integrated photonics chip.

FIG. 8 is schematic of an alternative configuration where a laser is integrated on the integrated photonics chip.

FIG. 9 is a plot showing wavelength dependent loss for different SiN waveguide configurations. The SiN waveguides are strip waveguides.

FIG. 10 is a schematic of an integrated photonics chip where optical signals from two lasers are combined.

FIG. 11 is a schematic of an integrated photonics chip where optical signals from more than two lasers are combined, and optionally a thermal sensor in integrated on-chip.

FIG. 12 shows a modified design of waveguide on the integrated photonics chip.

FIG. 13 shows some example location of TM filters on the integrated photonics chip.

FIG. 14 shows an embodiment similar to the embodiment of FIG. 13, but with the addition of thermal modulators in addition to high-speed electrical modulators for an extra means for phase shifting on the two output waveguide branches.

FIG. 15A shows leakage of TE mode in a serpentine structure. FIG. 15B shows leakage of TM mode, which is substantially more than the leakage of TE mode, so that the serpentine structure can be effectively used as a TM filter.

FIG. 16 shows a MMI filter that can be used as a TM filter.

FIG. 17 shows simulated TE/TM power transmission plots for an MMI filter for different lengths.

FIG. 18 compares TE/TM optical power transmission simulations for an MMI filter of optimum length and width to effectively filter TM out.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to integration of compact ultra-low loss waveguide chips with other system-level integrated photonics components for optical gyroscope applications. The system integration is done with large scale manufacturing in mind to facilitate mass production of integrated photonics optical gyroscopes.

FIG. 1 illustrates a high-level architecture 100 for a typical fiber optical gyroscope based on Sagnac effect. The architecture involves a laser source 110 sending optical signal to a polarization-maintaining (PM) fiber coil 124 via intermediate system components. The intermediate system components include an optical isolator 112, a polarizer 118, and phase modulators 120 and 122. The polarizer 118 and phase modulators 120 and 122 may be part of a lithium niobate (LiNbO₃) multi-functional integrated optical chip (MIOC) 116. Also, even if for clarity, the fiber coil 124 is shown to have just one loop, in actual devices, there may be a plurality of turns, depending on the length of fiber required to take advantage of the Sagnac effect. The phase modulators 120 and 122 may be along two branches of a 50/50 splitter within the MIOC 116. Light going in one direction sees a different (shorter or longer) path length than light going in the opposite direction, creating measurable phase shift due to Sagnac effect. The phase modulators may be electrically driven by a function generator 126 (e.g., a sine or square wave generator).

Signal from the function generator 126 is sent to a lock-in amplifier 128, which also receives signal from a photodetector 114 which receives directional optical signal from the circulator 112. The output 130 represents the phase shift in the gyroscope due to Sagnac effect caused by the difference in optical path length.

FIG. 2 illustrates a high-level architecture 200 for a fiber optical gyroscope where at least some components of the front end of a conventional architecture (e.g., what is shown in FIG. 1) are replaced with integrated photonics components. Components 212, 214, 216, 218, 220, 222, 226 and 228 are functionally equivalent to the corresponding components 112, 114, 116, 118, 120, 122, 126 and 128 described in FIG. 1. However, many of the components within the modified front end 250 can be fabricated using standard semiconductor manufacturing. For example, the components on the MIOC 216 may comprise all integrated photonics components. The laser source 210 and the fiber coil 224 may be outside of the modified front end 250, though further integration is possible, as described below. The fiber coil 224 constitutes the sensing portion 255 in the architecture 200, and in embodiments described below, the fiber coil may be replaced by a waveguide chip acting as the sensing portion 255. The output 230 is the measured phase shift due to optical path length difference. In addition, electronics may be integrated on chip, for example, as shown with respect to the illustrative embodiment in FIG. 3B below.

FIG. 3A is a schematic of one embodiment 300 of an integrated photonics chip 350 that couples to a fiber coil, or a waveguide chip (not shown) that can replace the fiber coil in FIGS. 1 and 2. The integrated photonics chip in embodiment 300 coupled with the waveguide chip constitute a gyroscope (e.g., a SiPhOG when silicon photonics is used) which may be part of an inertial measurement unit (IMU) package. Note that IMU may have other components, such as accelerometers, in addition to the integrated photonics optical gyroscope. Therefore, making the integrated photonics optical gyroscope part compact reduces the overall size, weight power and cost of the IMU. This weight reduction can be crucial for certain applications, for example, lightweight unmanned aerial vehicles. IMU may be a needed technology component a for more establishing sensing technologies for autonomous vehicles, such as LiDAR (Light Detection and Ranging), radar and cameras that will be used in future generation of autonomous vehicles.

In the waveguide chip (also referred to as the “gyro chip” or “sensing chip”), low-loss waveguide core may be made of silicon nitride (Si₃N₄), and the waveguide cladding may be made of fused silica or oxide. This waveguide structure is also referred to simply as SiN waveguide, and a chip containing the SiN waveguide is referred to as a SiN waveguide chip in the figures.

Referring back to FIG. 3A, the laser source (not shown) is coupled to the integrated photonics chip 350 via a fiber, which may be a single-mode (SM) fiber. The core size of a SM fiber is typically in the 8-10 μm range. An input waveguide on the integrated photonics chip 350 may have to be designed with a flared end for efficient coupling with the SM fiber carrying the optical signal from the laser source to the integrated photonics chip. Note that instead of fiber-coupling, laser light may be butt-coupled to the integrated photonics chip. Though the element 302 is labeled as a fiber coupler in the illustrative figures, it is generically an input coupler, as claimed. An optical tap (e.g., a tap that may take out 0.5-1% of optical power) may send part of the optical signal to a detector 340 to measure the coupling efficiency between the laser source and the integrated photonics chip. Optionally, an optical phase modulator 304 may be inserted in the optical path that eventually leads to an optical splitter, e.g., 2×2 optical splitters 306 and 308. Note that some embodiments may have two 2×2 splitters, some other embodiments may have an Y-splitter, and yet other embodiments may have a 2×2 splitter and a Y-splitter. Note that the terms “splitter” encompasses “coupler” also, because in the return path, splitters act as combiners. Also splitters/couplers do not have to be 50-50, i.e. optical signal can be split in other fractions as well. Some couplers can be directional couplers. Directional couplers can act as mode-selective elements too. Also note that the laser source may be on-chip, as shown in FIG. 10 either by direct attach or can be III-V bonded or epitaxially grown or grown using Quantum Dot technology on the front-end chip substrate. The optical phase modulator 304 may spread the linewidth of the laser source, as described further below.

The splitters and/or directional couplers are designed on-chip in the embodiment shown in FIG. 3A to emulate circulator (as in FIGS. 1 and 2) for optimized light back into the detector 338 (may be referred to as Sagnac detector—this is the key detector in the integrated photonics chip 350) for phase measurement. Also, electrical (e.g., p-n junction based) or other type of phase modulators may be incorporated in one or both of the two branches of the waveguide leading to output couplers 332 a and 332 b that are optimized for coupling out to the SiN waveguide chip. For example, thermal phase modulators may have lower insertion loss compared to other types of phase shifters, and are easy to integrate with the waveguides. Electrical phase modulator can be p-n junction based or p-i-n (p-intrinsic-n) junction based. Phase modulators can be operated in a forward bias mode or a reverse biased mode. Forward or reverse biased phase modulators can be combined with thermal phase modulators. The benefit of the forward biased phase modulators is that they are shorter in length current is driven through them, but usually they are slower (e.g., speed 3-50 MHz) compared to reverse-biased, where carriers are swept out at a much faster rate (e.g., 25 GHz), but the phase efficiency is less compared to forward-bias, so reverse-biased phase modulators are much longer than forward-bias and much more lossy due to higher doping.

The phase modulators may operate in a push-pull configuration to enhance the efficacy of the Sagnac effect. For push-pull operation, phase modulators are included in both output waveguide branches. However, in some embodiments, only one branch of the output waveguide has a phase modulator, i.e. one of the modulators 320 or 322 may not be present, or may not be used. For example, FIG. 5D shows that just one branch of a waveguide has a phase modulator. FIG. 13 shows that even though a phase modulator 322 is included (dashed line) for optional use in the push-pull mode, optical beam in only one branch can be modulated. Also note that though the word “output” is used to describe the waveguides branches and output couplers 332 a and 332 b, the same structures receive the return optical beams as input from the SiN chip once the beams have traveled through the sending coil or optical resonator in the SiN chip.

A non-limiting illustrative dimension of the SiN waveguide in the gyro chip is a height (i.e. thickness of the patterned waveguide core layer) of 90 nm and a lateral width of 2.8 μm. Persons skilled in the art would appreciate that these illustrative dimensional values mentioned in the specification are not limiting to the scope of the disclosure. To lower waveguide loss, it may be beneficial to have symmetric upper and lower claddings around the SiN core. This structure may be obtained via wafer bonding of fused silica wafers or other suitable materials such as oxide. The thickness of the waveguide SiN layer may vary between 60-90 nm and the width may vary between 2-5 μm depending on the desired optical mode. The design of the output couplers 332 a and 332 b varies based on waveguide dimensions on the SiN waveguide chip. Output spacing and/or optimal placement of couplers 332 a and 332 b on the photonics chip can be determined using simulation before fabricating the integrated photonics chip 350. SiN waveguides on fused silica platform are described in provisional applications 62/858,599 filed on Jun. 7, 2019, titled, “Integrated Silicon Photonics Optical Gyroscope on Fused Silica Platform,” and 62/896,365 filed on Sep. 5, 2019, titled “Single-layer and Multi-layer Structures for Integrated Silicon Photonics Optical Gyroscopes.”

In addition to the Sagnac detector 338, additional detectors 333, 334, 336 and 337 may be incorporated to measure (for testing and/or monitoring) propagation and coupling losses at various places along the integrated photonics chip as well as to measure coupling efficiency between the integrated photonics chip and the SiN waveguide chip. For example, detectors 333 and 334 may be coupled to optical taps (e.g., 0.5-1% of the optical power is tapped) that measure coupling efficiency at the output couplers 332 a and 332 b. The detectors can be p-i-n photodetectors (PIN diodes) that convert light to electrical signal. The detectors can also be avalanche photodiodes (APDs). One of the advantages of using APDs is the gain achievable at the detector reduces the need to increase the laser power. Note that all of the detectors 333, 334, 336 and 337 may not be used in all embodiments. Also, some detectors on the test chip masks may be taken away from the product mask once the chip design is optimized and chip performance is optimized, requiring less number of detectors for monitoring.

FIG. 3B shows various electronics integrated on the integrated photonics chip 350. For example, an on-chip signal generator 305 may be coupled to the phase modulator 304. On-chip trans-impedance amplifier (TIA) and/or other types of amplifiers to boost detected signal may be integrated on-chip as well, as shown with components 341, 339, 342, 343 and 335, coupled to the corresponding detectors. Additionally, a phase modulator driver 321 may de integrated on-chip to impart optical phase difference between the two output waveguide branches. Integrating electronics with photonics in some cases improves performance and reduces noise and provides feedback controls. Although not shown in FIG. 3B, laser power monitoring detectors and corresponding electronics may be part of an integrated photonics chip.

FIG. 3C shows that a deep implant (shown as the thick rectangle) around the Sagnac detector 338 is key to avoid any optical signals leaking or scattering in from the integrated photonic chip into the Sagnac phase difference signal that is being measured by the detector 338. More details about the use of implant to avoid light leakage is described with respect to FIGS. 5B-5E.

FIG. 4 is a schematic of an alternative embodiment 400 of an integrated photonics chip that couples to a SiN waveguide chip, where the optical path includes a polarizer 404 or optical mode selective filter. Other components in embodiment 400, such as 402, 406, 408, 420, 422, 432 a, 432 b, 436 and 438 are functionally equivalent to the corresponding components 302, 306, 308, 320, 322, 332 a, 332 b, 336 and 338 shown and described with respect to FIG. 3A.

FIG. 5A is schematic of yet another embodiment 500 of an integrated photonics chip that couples to a SiN waveguide chip, wherein the integrated photonics chip is designed to facilitate packaging. In this design, instead of 2×2 splitter(s), a Y-splitter 542 is incorporated. Note that the Y-splitter should be as close to 50-50 as possible. The embodiment shown in FIG. 5A may be used for customized testing purposes.

FIG. 5B shows how light that is typically confined within the raised portion of the rib waveguide on the photonics chip 350 may be leaking into the slab portion of the rib waveguide. This leakage happens in the straight portions of the waveguides too, but are especially prominent around bends, curves, junctions and/or any interface. Both the left and right figures in FIG. 5B are simulated contours of optical mode in the rib waveguide. The leaky or scattered light can propagate throughout the entire integrated photonic chip 350 and bounce around, which may detrimentally affect performance of the detectors, including the key Sagnac detector 338, if the leaked light gets mixed with the optical signal coming from the waveguide gyro coil. In one embodiment, the raised portion of the rib waveguide may have a height of 0.2-0.5 μm, and the slab portion of the rib waveguide may have a height of 0.2-0.5 μm, making the total height of the rib waveguide in the range of 0.4-1.0 μm. Other dimensions may be used too.

In order to keep the light confined to the waveguide, the inventors use a solution illustrated in FIG. 5C. High dose of implants (e.g., peak concentration of 10{circumflex over ( )}19 dopants per cm³) all the way through the slab around the waveguides absorbs scattered light, so that it does not leak out to other components, including the detectors or adjacent waveguides. As shown in later figures, alternative design for the waveguide is also introduced to confine a specific mode within the waveguide. One alternative design is known as the strip waveguide shown in FIG. 12.

FIG. 5D shows top view of the layout of a chip very similar to the chip shown in FIG. 5A, where implants are shown (in thick lines) around the waveguides including the Y-junctions to reduce crosstalk between the two branches of the Y-splitter and also to block scattered light that may come to the edges of the chip from external sources.

FIG. 5E shows top view of another layout of an integrated photonics optical gyroscope front end with implant (shown as the thick lines) all around the waveguides of the 2×2 splitters (such as splitters shown schematically in FIG. 3A) and around the Sagnac photodetector (such as detector 338 shown schematically in FIG. 3A). FIG. 5E shows a polarizer (such as a polarizer shown in FIG. 4) as an optional component. The need for a polarizer may be eliminated by proper design of the waveguide (e.g., TE polarized waveguide) or use of appropriate mode selective filters in the integrated chip.

FIG. 6 is schematic of a package housing a laser, various integrated circuits for control, an integrated photonics chip and a SiN waveguide chip. The package 600 includes an integrated photonics chip 650 (which may be similar to embodiments shown in FIGS. 3-5), and a SiN waveguide chip 624. The SiN waveguide chip 624 may have a waveguide spiral in one plane, as shown in FIG. 6, where the input and output waveguides intersect, because direction of light cannot change. Alternatively, in order to avoid intersecting waveguides, portions of the waveguide coil or ring may be distributed among a plurality of vertical planes, as described in U.S. provisional application No. 62/858,588, filed Jun. 7, 2019. The laser source 610 is outside of the integrated photonics chip 650, and possibly fiber-coupled to chip 650 or butt coupled. Discrete control ICs 660, 662, 664 for the laser 610 and/or the chip 650 may be inside the package 600, but not integrated on the same wafer platform. As the degree of integration increases, many of these discrete ICs may be monolithically integrated into the chip 650.

FIG. 7 is schematic of a configuration where a laser chip 770 is attached to an integrated photonics chip 750 but not part of the integrated photonics chip, i.e. the laser is off-chip. There may be additional components, such as an isolator 772 and a lens 774 (ball lens or other type of suitable lens) hybridly integrated on the laser chip 770. The components on the chip 750 are similar to components shown and described with respect to FIG. 3A, but persons skilled in the art would readily ascertain that other arrangement of system components (e.g., what is shown in FIG. 4 or 5A) are entirely possible. Using a lens to focus the light emitting from the laser 710 may dictate the design of the optical coupler 702 (at input waveguide end) on the chip 750.

FIG. 8 is schematic of a configuration showing higher degree of on-chip integration, where the laser 810, isolator 872 and a lens 874 are integrated on the integrated photonics chip 850. Using a lens to focus the light emitting from the laser 810 may dictate the design of the optical coupler 802 (at input waveguide end) on the chip 850. Other components in FIG. 8 are identical to the embodiment in FIG. 7. In addition the laser may be bonded using III-V hybrid bonding or grown epitaxial onto silicon.

FIG. 9 is a plot showing wavelength dependent loss for different waveguide configurations. Note that in the overall design of integrated photonics optical gyroscope, the laser source is designed for the wavelength optimum for the waveguide loss. The laser source itself may be broadband and additional components may be used to tune to the desired wavelength. Attenuation in a waveguide is caused by loss of optical signal due to absorption and scattering within the waveguide, as well as radiation loss due to geometric features of the waveguide, such as, microbending and/or sidewall roughness. Scattering and absorption depend on the wavelength of light. In silica-based waveguides containing hydroxyl ions (OH—) impurities, the interaction between vibrating silicon-hydroxyl (Si—OH) bonds and the electromagnetic field of the optical signal causes enhanced absorption at certain harmonic wavelengths. Long-haul fiber optic communication systems utilize 1550 nm as the optimum wavelength for single-mode optical fibers because it is sufficiently away from the enhanced absorption windows and the scattering losses are very low too. However, for integrated photonics optical gyroscope applications, adhering stringently to the 1550 nm wavelength is not a requirement because long-haul optical communication is not an applicable premise here. Rather choosing a wavelength that corresponds to the lowest loss in the SiN waveguide is of importance.

FIG. 9 shows three graphs where measured loss (in dB/m) is plotted against wavelength for three different waveguide configurations: graph 902 for a narrower width waveguide, graph 904 for an intermediate width waveguide and graph 906 for a wider waveguide. As see in FIG. 9, for all three configurations of the waveguide, the loss in the 1550 nm wavelength region is much higher (in the vicinity of 0.7 dB/m) compared to the loss in the 1570-1580 nm wavelength region, where loss is below 0.35 dB/m. With improved waveguide fabrication process (including fine tuning the annealing process to extricate water from the fused silica or oxide), and focus on sidewall smoothing, the loss can be lower than 0.1 dB/m. By selecting the proper laser wavelength one can optimize the signal, lower laser power or improve overall performance of the integrated photonics optical gyroscope. Note that even lower losses have been measured with modified designs and dimensions of the waveguides than what are shown in FIG. 9.

FIG. 10 shows an embodiment 1000 where many components are similar to the design shown in FIG. 3A. However, the key differences with FIG. 3A include using two lasers 1010 a and 1010 b for doubling the power and/or for redundancy in case one laser malfunctions. Standard commercially available Distributed Feedback (DFB) or Fabry-Perot (FP) lasers may have low power (in the range of 25-50 mW) per laser. So combining lasers helps in harnessing more power with low-cost high-volume-manufactured lasers easily available in the market.

Also, it is possible to use two or more lasers (instead of using one laser) and directly modulate the lasers to spread the linewidth and help with coherency. The modulator 1004 provides random phase noise onto the combined beam from the two or more lasers to smear them to address coherency between the two lasers, and generate an output beam that is equivalent to a broadband light coming from a single source. Two or more lasers thus can be combined to increase the overall power vs one laser with large power. An additional detector may be used to tap the optical signal to monitor the laser signal and power levels.

FIG. 11 is identical to FIG. 10 with the exception of a series of lasers (1, . . . , N) instead of just two lasers. FIG. 11 also shows that additional components, such as thermal sensor 1100 may be integrated on the integrated photonics chip to monitor whether the chip is operating at a desired temperature range so that the laser performance is not degraded.

FIG. 12 shows a modified design of waveguide on the integrated photonics chip 350. Instead of rib waveguides shown in FIG. 5B, strip waveguides 1204 are introduced, as strip waveguides are better suited for confining transverse electron (TE) mode than transverse magnetic (TM) mode (i.e. confined optical mode 1208 has predominantly TE component). In an embodiment, a strip waveguide may have a height (‘h’) of 0.2 μm and a width of 1-2 μm. The major difference between a rib waveguide and a strip waveguide is that there is no slab portion in a strip waveguide, and the waveguide is etched all the way down to the substrate 1206 (e.g. the buried oxide layer on a silicon substrate). Implant regions 1202 may surround the strip waveguides to prevent light leakage and/or to blocking stray light from other components or the chip environment. For example, when TM or TE mode leaks out of a strip waveguide, it is absorbed in the implant region so that it does not reach detectors or other optical components. In addition to making the waveguides inherently TE mode-selective by design, TM filters may be placed at different locations along the optical path on the integrated photonics chip. Note that rib waveguides may have lower loss for both TE and TM, but strip waveguides may be designed in such a way have lower loss for TE while much higher loss for TM. There maybe be also transitions from strip to rib waveguides and vice versa throughout the chip for various optical devices. For example, the phase modulators are typically rib waveguide based devices. Note that the SiN waveguides on the gyro chip are already similar to strip waveguides, as they do not have a slab portion.

FIG. 13 shows some example location of TM filters. Since input light coming from the fiber may have both TE and TM modes, there may be TM filters in between the input coupler 302 and the first 2×2 splitter 306. Each TM filter may constitute a TM filter bank comprising a plurality of individual filters in series. For example, in FIG. 13, each stage 1360 and 1362 of a TM filter may have 1, 2, 4, 6 . . . multi-mode interference (MMI) filters. One or more TM filter 1366 may also be placed before light reaches the key detector (i.e. Sagnac detector 338 shown in previous figures) or at other places throughout the integrated photonics chip as needed to improve performance. For example, a TM filter 1364 may be included to provide the functionality of a polarizer 404 shown in FIG. 4 or the polarizer shown in FIG. 5E). Note that though not shown in FIG. 13, the key detector 338 may be surrounded by implant regions. Note that, in some embodiments, only one branch of the waveguide has a phase modulator (electrical and/or thermal). For example, the phase modulator 322 (shown with dashed line) may be absent altogether or not actively used in certain operational modes, while phase modulator 320 may be actively used to introduce phase difference between the optical beams in the two branches of the output waveguide.

FIG. 14 shows an embodiment similar to the embodiment of FIG. 13, but with the addition of thermal modulators (1421, 1423) in addition to high-speed electrical modulators (1420, 1422) for an extra means for phase shifting on the two output waveguide branches. The system may have just high speed modulators or just thermal modulator or combination of both on single or both arms.

As mentioned above, the TM filters may be based on serpentine structure (S-bends shown in FIGS. 15A-B), or based on MMI filters. FIGS. 15A and 15B show a serpentine structure that can be used as a TM filter. FIG. 15A show simulated leakage of TE light around the bends of the serpentine structure, and FIG. 15A show simulated leakage of TM light around the bends of the serpentine structure. Since TM leakage is much more prominent, the output of the serpentine structure will have mostly TE light with TM light being filtered out.

FIG. 16 shows a MMI filter that can be used as a TM filter. Designing proper length and width of the MMI portion, TM mode can be mostly filtered out.

FIG. 17 shows simulated TE/TM optical power transmission plots for an MMI filter for different lengths. Plot 1702 indicates TE power transmission, and plot 1704 indicates TM power transmission. For example, at a designed length of 43.35 μm, transmission for TE mode is 97.42% and transmission for TE mode is 37.53% for each MMI filter. This translates to a loss for TE mode (L_(TE)) equal to −0.1132 dB per MMI filter, and a loss for TM mode (L_(TM)) equal to −4.2560 dB per MMI filter. The extinction ratio (ER) is 4.1425 dB per MMI filter. Effectiveness of filtering TM out can be achieved by using multiple MMI filters in series (e.g., 2, 4 or more MMI filters).

FIG. 18 shows TE/TM optical power transmission simulations for an MMI filter 1830 of optimum length and width to effectively filter TM out. The upper FIG. 1810 shows TE signal transmission and the lower FIG. 1820 shows TM signal transmission. While most of the TE light 1832 coupled at the input end is transmitted through the MMI filter at the output end, TM light 1836 coupled at the input end is partially scattered to the substrate. Hence the need for implants to absorb the scattered light is there (i.e., as shown in FIG. 5C and FIG. 12). FIG. 18 clearly shows that transmitted TE light 1834 at the output end is significantly predominant over transmitted TM light 1838.

In the foregoing specification, implementations of the disclosure have been described with reference to specific example implementations thereof. It will be evident that various modifications may be made thereto without departing from the broader spirit and scope of implementations of the disclosure as set forth in the following claims. The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than a restrictive sense. Additionally, the directional terms, e.g., “top”, “bottom” etc. do not restrict the scope of the disclosure to any fixed orientation, but encompasses various permutations and combinations of orientations. 

What is claimed is:
 1. An integrated photonics-based front-end chip for coupling light into and out of a rotation sensing element, the front-end chip comprising: an input coupler that couples light into an integrated photonics waveguide structure on the front-end chip that propagates the coupled light in the form of a guided optical beam towards the rotation sensing element; a plurality of couplers in a path of the guided optical beam to produce a first branch and a second branch of the guided optical beam; a phase modulator that modulates optical phases of the first branch and the second branch of the guided optical beam relative to each other, wherein the phase modulator has both p-n junction and p-i-n junction; a first output coupler that couples the first branch of the guided optical beam with a first end of the rotation sensing element; a second output coupler that couples the second branch of the guided optical beam with a second end of the rotation sensing element; and an optical detector coupled with at least one coupler of the plurality of couplers in the path of the guided optical beam, wherein the optical detector receives an optical signal representing an optical phase difference in return paths of the first branch and second branch of the guided optical beam after traveling within the rotation sensing element and after being coupled back to the integrated photonics waveguide structure on the front-end chip via the first output coupler and the second output coupler.
 2. The front-end chip of claim 1, further comprising a light source, wherein the light source comprises one or more semiconductor lasers.
 3. The front-end chip of claim 2, further comprising control electronics for the light source.
 4. The front-end chip of claim 1, wherein the rotation sensing element is a fiber loop.
 5. The front-end chip of claim 1, wherein the rotation sensing element is a waveguide loop.
 6. The front-end chip of claim 5, wherein the waveguide loop is a waveguide ring.
 7. The front-end chip of claim 5, wherein the waveguide loop is a waveguide coil.
 8. The front-end chip of claim 5, wherein the waveguide loop comprises a silicon nitride waveguide core.
 9. The front-end chip of claim 1, wherein at least one of the plurality of couplers is a directional coupler.
 10. The front-end chip of claim 1, wherein the phase modulator is operated in a forward bias mode or a reverse bias mode.
 11. The front-end chip of claim 10, wherein the phase modulator has a thermal component.
 12. The front-end chip of claim 1, wherein the integrated photonics waveguide structure on the front-end chip comprises at least one or both of a rib waveguide or a strip waveguide, wherein a rib waveguide comprises a raised portion on top and a slab portion in the bottom adjacent to an oxide layer on a silicon substrate, and a strip waveguide comprises a rectangular cross section etched all the way down to an oxide layer on a substrate.
 13. The front-end chip of claim 12, wherein the phase modulator is in a section of the integrated photonics waveguide structure with the rib waveguide.
 14. The front-end chip of claim 1, wherein the integrated photonics waveguide structure comprises optical delay lines for phase modulation.
 15. The front-end chip of claim 1, wherein at least some portions of the integrated photonics waveguide structure are surrounded by implant regions to prevent leakage of guided light and to block external light.
 16. The front-end chip of claim 1, wherein the optical detector is completely surrounded by implant regions.
 17. An integrated photonics-based front-end chip for coupling light into and out of a rotation sensing element, the front-end chip comprising: an input coupler that couples light into an integrated photonics waveguide structure on the front-end chip that propagates the coupled light in the form of a guided optical beam towards the rotation sensing element; a plurality of couplers in the path of the guided optical beam to produce a first branch and a second branch of the guided optical beam; a phase modulator that modulates optical phases of the first branch and the second branch of the guided optical beam relative to each other, wherein the phase modulator has an electrical component and a thermal component; a first output coupler that couples the first branch of the guided optical beam with a first end of the rotation sensing element; a second output coupler that couples the second branch of the guided optical beam with a second end of the rotation sensing element; and an optical detector coupled with at least one coupler of the plurality of couplers in the path of the guided optical beam, wherein the optical detector receives an optical signal representing an optical phase difference in return paths of the first branch and second branch of the guided optical beam after traveling within the rotation sensing element and after being coupled back to the integrated photonics waveguide structure on the front-end chip via the first output coupler and the second output coupler.
 18. The front-end chip of claim 17, wherein the electrical component of the phase modulator is operated in a forward bias mode or a reverse bias mode.
 19. The front-end chip of claim 17, wherein the electrical component of the phase modulator comprises one or both of a p-n junction or a p-i-n junction.
 20. The front-end chip of claim 17, further comprising a light source, wherein the light source comprises one or more semiconductor lasers.
 21. The front-end chip of claim 20, further comprising control electronics for the light source.
 22. The front-end chip of claim 17, wherein the rotation sensing element is a fiber loop.
 23. The front-end chip of claim 17, wherein the rotation sensing element is a waveguide coil or a waveguide ring.
 24. The front-end chip of claim 23, wherein the waveguide coil or the waveguide ring comprises a silicon nitride waveguide core.
 25. The front-end chip of claim 17, wherein at least one of the plurality of couplers is a directional coupler.
 26. The front-end chip of claim 17, wherein the integrated photonics waveguide structure on the front-end chip comprises at least one or both of a rib waveguide or a strip waveguide, wherein a rib waveguide comprises a raised portion on top and a slab portion in the bottom adjacent to an oxide layer on a silicon substrate, and a strip waveguide comprises a rectangular cross section etched all the way down to an oxide layer on a substrate.
 27. The front-end chip of claim 26, wherein the phase modulator is in a section of the integrated photonics waveguide structure with the rib waveguide.
 28. The front-end chip of claim 17, wherein the integrated photonics waveguide structure comprises optical delay lines for phase modulation.
 29. The front-end chip of claim 17, wherein at least some portions of the integrated photonics waveguide structure are surrounded by implant regions to prevent leakage of guided light and to block external light.
 30. The front-end chip of claim 17, wherein the optical detector is completely surrounded by implant regions. 